Micron has just announced that it has sent samples for qualification of its Universal Flash Storage (UFS) 4.0 built on a 232-layer 3D NAND. Effectively, UFS 4.0 will offer high capacity with the fastest performance in the industry.
According to their official release, Micron has sent this UFS 4.0 solution to smartphone manufacturers and specific global chipset vendors, where Micron’s UFS 4.0 is said to compete in several important NAND benchmarks and deliver high and fast performance for faster booting, application launching, and video downloading on mobile devices.
Micron’s UFS 4.0 is built on their innovative 232-layer triple-level cell (TLC) 3D NAND. With this innovation, UFS will deliver 100% higher write bandwidth and 75% higher read bandwidth compared to the previous generation.
In detail, UFS 4.0 can provide sequential read speeds of up to 4300 MBps and sequential write speeds of up to 4000 MBps, which is twice the speed of the previous generation. Additionally, UFS offers power savings of up to 25%, provides 10% lower write latency compared to competitors, and enables smartphones to download 2 hours of 4K streaming content in less than 15 seconds. In terms of capacity, UFS 4.0 can accommodate up to 1TB.
UFS 4.0 is expected to be produced in high volume in the second half of 2023.
